Infineon IPD80R4K5P7: A High-Performance Power MOSFET for Efficient Switching Applications

In the realm of power electronics, the demand for components that offer high efficiency, robustness, and thermal stability continues to grow. The Infineon IPD80R4K5P7 stands out as a premier power MOSFET engineered specifically to meet these rigorous demands in modern switching applications. This device is a testament to Infineon's expertise in semiconductor technology, providing designers with a reliable solution that enhances performance while minimizing losses.

A key highlight of the IPD80R4K5P7 is its exceptionally low on-state resistance (RDS(on)) of just 4.5 mΩ. This ultra-low resistance is critical for reducing conduction losses, which directly translates to higher efficiency and less heat generation. Whether used in switch-mode power supplies (SMPS), motor control systems, or DC-DC converters, this characteristic ensures that the device operates effectively even under high-current conditions.

Built on Infineon’s advanced OptiMOS™ technology, this MOSFET is optimized for high-frequency switching operations. The technology minimizes gate charge and output capacitance, enabling faster switching speeds and reduced switching losses. This makes the IPD80R4K5P7 particularly suitable for applications where efficiency and power density are paramount, such as in automotive systems, industrial drives, and renewable energy inverters.

The device is housed in a TOLL (TO-Leadless) package, which offers significant advantages in terms of thermal performance and space savings. The package’s compact footprint and low profile make it ideal for high-density PCB designs, while its excellent thermal conductivity ensures effective heat dissipation, contributing to the overall reliability and longevity of the system.

Furthermore, the IPD80R4K5P7 is designed with a strong emphasis on ruggedness and durability. It features a high avalanche robustness and an extended safe operating area (SOA), allowing it to withstand overload conditions and voltage spikes without compromising performance. This robustness is essential for applications in harsh environments where reliability cannot be sacrificed.

ICGOOFind: The Infineon IPD80R4K5P7 power MOSFET sets a high standard for performance in power switching applications. With its ultra-low RDS(on), superior switching characteristics, and robust thermal management, it provides an optimal solution for designers seeking to enhance efficiency and power density in their systems.

Keywords: Power MOSFET, High Efficiency, Low RDS(on), OptiMOS™ Technology, TOLL Package