BSC060N10NS3GATMA1: A 100V OptiMOS™ Power MOSFET for High-Efficiency Switching Applications

The relentless pursuit of higher efficiency and power density in modern electronic systems places immense demands on power switching components. At the heart of many advanced designs, from server and telecom power supplies to motor control and battery management systems, lies the power MOSFET. The BSC060N10NS3GATMA1, a 100V N-channel OptiMOS™ Power MOSFET from Infineon Technologies, stands out as a premier solution engineered to meet these challenges head-on.

This device is built upon Infineon's advanced OptiMOS™ technology platform, renowned for its exceptional balance of low on-state resistance and high switching performance. A key figure of merit for any power MOSFET is its R DS(on), which directly impacts conduction losses. The BSC060N10NS3GATMA1 boasts an ultra-low maximum R DS(on) of just 6.0 mΩ at 10 V gate drive. This remarkably low resistance ensures minimal power is wasted as heat during the on-state, leading to significantly higher efficiency and reducing the need for extensive thermal management.

Beyond low conduction losses, switching performance is critical for high-frequency operation. The OptiMOS™ technology underpinning this MOSFET is characterized by superior switching dynamics, including low gate charge (Q G ) and low effective output capacitance (C OSS(eff) ). These traits translate to reduced switching losses, allowing designers to push switching frequencies higher. This, in turn, enables the use of smaller passive components like inductors and capacitors, which is a fundamental step towards achieving greater power density and more compact system designs.

The device's 100V voltage rating provides a comfortable safety margin for popular 48V bus applications, including 48V to 12V and 48V to point-of-load (POL) conversion in data centers, as well as various industrial inverters. Its optimized technology ensures robust performance and high reliability under strenuous conditions. Furthermore, it is qualified for industrial applications and features a halogen-free package, complying with the latest environmental standards.

Housed in a space-saving SuperSO8 package, the BSC060N10NS3GATMA1 offers an excellent power-to-footprint ratio. This makes it an ideal choice for applications where board space is at a premium without compromising on thermal performance or current handling capability.

ICGOOODFIND: The BSC060N10NS3GATMA1 exemplifies the innovation in power semiconductor technology, delivering a potent combination of ultra-low R DS(on), fast switching speed, and high reliability in a compact package. It is a top-tier choice for engineers aiming to maximize efficiency and power density in their next-generation 100V switching applications.

Keywords: OptiMOS™, Low R DS(on), High-Efficiency Switching, Power Density, SuperSO8 Package.