Infineon IRF2805STRLPBF N-Channel Power MOSFET for High-Efficiency Switching Applications

In the realm of modern power electronics, achieving high efficiency and reliability in switching applications is paramount. The Infineon IRF2805STRLPBF N-Channel Power MOSFET stands out as a premier component engineered to meet these demanding requirements. Designed with advanced semiconductor technology, this MOSFET is optimized for high-performance power management in a variety of applications, including switch-mode power supplies (SMPS), motor control, DC-DC converters, and automotive systems.

A key feature of the IRF2805STRLPBF is its exceptionally low on-state resistance (RDS(on)) of just 1.5 mΩ at a gate-source voltage of 10 V. This ultra-low resistance minimizes conduction losses, allowing for higher efficiency and reduced heat generation during operation. The device is capable of handling a continuous drain current (ID) of 75 A and a pulsed drain current of up to 300 A, making it suitable for high-current applications. With a drain-source voltage (VDS) rating of 55 V, it provides robust performance in common industrial and automotive voltage ranges.

The MOSFET utilizes Infineon’s advanced StripFET technology, which enhances switching performance and thermal efficiency. This technology ensures faster switching speeds, which is critical for reducing switching losses in high-frequency applications. The low gate charge (QG) of 110 nC further contributes to improved switching characteristics, enabling efficient operation at elevated frequencies without significant drive power requirements.

Packaged in a D2PAK (TO-263) surface-mount package, the IRF2805STRLPBF offers excellent thermal conductivity and power dissipation capabilities. This package is designed for easy mounting on PCBs and is well-suited for automated assembly processes, ensuring reliability in mass production. The device also features a low thermal resistance junction-to-case (RthJC) of 0.5 °C/W, which aids in effective heat management and prolongs the component’s operational lifespan.

In addition to its electrical and thermal advantages, the IRF2805STRLPBF is characterized by its high durability and compliance with automotive standards, making it ideal for use in harsh environments. Its avalanche ruggedness and high-speed body diode enhance system reliability, especially in inductive load applications where voltage spikes and reverse recovery events are common.

ICGOOODFIND: The Infineon IRF2805STRLPBF is a high-performance N-Channel MOSFET that combines ultra-low RDS(on), high current capability, and superior thermal management, making it an excellent choice for high-efficiency switching applications across various industries.

Keywords: Power MOSFET, High Efficiency, Low RDS(on), Switching Applications, Thermal Management.