Intel TE28F256P30T95 256-Megabit (32M x 8) P30 Flash Memory: A Technical Overview
The Intel TE28F256P30T95 represents a significant component in the landscape of non-volatile memory solutions. As a 256-megabit (32M x 8) StrataFlash® memory device, it belongs to Intel's P30 family, which is engineered for high-performance, low-voltage applications. This device is fabricated using Intel's advanced 130nm process technology, offering a robust blend of density, speed, and reliability.
A core feature of this memory is its synchronous burst mode operation, which is optimized for systems requiring high-bandwidth data access. This allows for rapid sequential read operations at clock speeds up to 95MHz, significantly enhancing the performance of the host system. The device operates on a single 3.0V power supply (VCC) for all read, program, and erase operations, making it highly suitable for power-sensitive portable and embedded applications.
The architecture is organized as a 32 Megabyte (32M x 8) array, providing a straightforward byte-wide data interface. This simplifies system design by allowing direct connection to industry-standard microprocessors. The device supports both synchronous (burst) and asynchronous read modes, offering design flexibility. For write operations, it features a Write State Machine (WSM) that automates the complex algorithms for programming and erasure, freeing the host processor from this overhead and ensuring high reliability and data integrity.
Key specifications include a fast asynchronous page access time of 95ns and a synchronous burst access time as low as 10.5ns for the initial word. The memory is organized into 128-kilobyte main blocks and 32-kilobyte parameter blocks, providing flexible storage management. The parameter blocks are ideal for storing frequently updated code or data, such as boot code or system parameters. The device offers a minimum of 100,000 program/erase cycles per block and can retain data for up to 20 years, underscoring its endurance and long-term reliability.
Furthermore, it incorporates advanced hardware and software data protection mechanisms. These include a hardware-based write protection pin (WP) and a password-protected lock register to prevent accidental or malicious writes to critical memory sectors. It also supports the Common Flash Memory Interface (CFI), enabling the host system to automatically identify the memory device and its key characteristics.
ICGOODFIND: The Intel TE28F256P30T95 is a high-density, high-performance flash memory solution that excels in low-voltage operation, high-speed burst reads, and exceptional reliability. Its integrated management features and robust architecture make it an excellent choice for a wide range of demanding embedded systems, from networking equipment and set-top boxes to advanced industrial controls.
Keywords: Flash Memory, StrataFlash, Synchronous Burst Mode, Non-Volatile Memory, Embedded Systems.
