Infineon IPN60R1K0CEATMA1 CoolMOS™ Power Transistor: Datasheet, Features, and Application Notes

The Infineon IPN60R1K0CEATMA1 stands as a prominent member of the revolutionary CoolMOS™ CE family, representing a significant leap forward in high-voltage power MOSFET technology. Engineered for exceptional efficiency and robustness, this transistor is designed to meet the demanding requirements of modern switched-mode power supplies (SMPS), lighting, and industrial applications.

Key Features and Electrical Characteristics

At its core, the IPN60R1K0CEATMA1 is an N-channel power transistor built on Infineon's proprietary superjunction (SJ) technology. This innovation is the key to its outstanding performance, enabling a remarkable reduction in on-state resistance for a given die size. The device is rated for a drain-source voltage (VDS) of 650 V, making it suitable for operation from universal mains inputs (85 V AC to 265 V AC). Its standout feature is an ultra-low on-state resistance (RDS(on)) of just 1.0 Ω (max. at Tj=25°C), which is a primary factor behind its high efficiency. This low RDS(on) directly translates to reduced conduction losses, leading to cooler operation and higher power density in end designs.

Furthermore, the transistor boasts an exceptionally low gate charge (Qg) and low effective output capacitance (Coss(eff)). These characteristics are critical for achieving low switching losses, allowing for higher switching frequencies. This enables designers to use smaller, lighter magnetics and capacitors, ultimately shrinking the overall system size and cost. The device is also characterized by its fast switching speed and superior body diode robustness, enhancing its reliability in hard-switching topologies like flyback and power factor correction (PFC) circuits.

Application Notes and Design Considerations

The IPN60R1K0CEATMA1 is ideally suited for a wide array of power conversion applications. Its primary use is in high-efficiency switched-mode power supplies (SMPS), including adapters, chargers, and server power supplies. It is also an excellent choice for LED lighting drivers and industrial power systems.

When designing with this CoolMOS™ transistor, several factors are crucial for optimal performance:

Gate Driving: A proper gate driver circuit is essential. It must provide sufficient peak current to quickly charge and discharge the input capacitance, minimizing switching transition times. A gate-source voltage (VGS) of typically +15 V is recommended for full enhancement.

Heat Management: Despite its high efficiency, managing power dissipation is critical. Ensuring a low thermal resistance path from the case (SOT-223 package) to the ambient environment via an appropriate heatsink is necessary to keep the junction temperature within safe limits (< 150°C).

PCB Layout: A good PCB layout is paramount for high-frequency switching performance. It is vital to minimize parasitic inductance in the high-current loop (drain source path) and the gate drive loop to prevent voltage spikes and oscillations.

ICGOODFIND: The Infineon IPN60R1K0CEATMA1 CoolMOS™ CE transistor is a benchmark component for high-voltage power conversion. Its superior blend of ultra-low on-resistance, fast switching capability, and high robustness empowers engineers to design more compact, efficient, and reliable power supplies, pushing the boundaries of power density and energy savings.

Keywords: CoolMOS™, Superjunction Technology, Low RDS(on), High-Efficiency SMPS, Power Transistor.