Infineon IPL60R085P7AUMA1 CoolMOS™ P7 Power Transistor: Advanced 600V Superjunction MOSFET for High-Efficiency Applications

The relentless pursuit of higher efficiency and power density in modern electronics drives the need for advanced semiconductor solutions. At the forefront of this innovation is Infineon Technologies with its CoolMOS™ P7 series, a benchmark in superjunction (SJ) MOSFET technology. The IPL60R085P7AUMA1 stands as a prime example, a 600V N-channel power transistor engineered to set new standards in performance for a wide array of high-efficiency applications.

This MOSFET leverages Infineon's deeply optimized superjunction technology, which fundamentally redefines the relationship between on-state resistance (RDS(on)) and gate charge (Qg). The result is a device that offers an exceptionally low figure-of-merit (FOM = RDS(on) x Qg), a critical parameter for minimizing both conduction and switching losses. With a maximum RDS(on) of just 85 mΩ at a gate-source voltage of 10 V, it ensures minimal power dissipation during operation. This characteristic is paramount for enhancing system efficiency, reducing heat generation, and enabling more compact designs by allowing for smaller heatsinks or even their complete elimination in some cases.

The IPL60R085P7AUMA1 is specifically designed to excel in demanding switch-mode power supplies (SMPS). This includes applications such as server and telecom power supplies, industrial motor drives, solar inverters, and lighting ballasts. Its superior switching performance allows for higher operating frequencies, which in turn enables the use of smaller passive components like inductors and transformers. This directly contributes to increased power density, allowing manufacturers to build more powerful systems in the same form factor or reduce the size of existing designs.

Beyond raw performance, the CoolMOS™ P7 technology incorporates robust and reliable features. It offers excellent electromagnetic compatibility (EMC) characteristics due to its controlled switching behavior, simplifying filtering requirements. The device also provides high dv/dt and di/dt capability, ensuring stable operation under harsh conditions. Furthermore, it features a high body diode robustness, enhancing its reliability in hard-switching topologies like power factor correction (PFC) circuits.

In summary, the Infineon IPL60R085P7AUMA1 is more than just a MOSFET; it is a key enabler for the next generation of energy-efficient power conversion systems.

ICGOOODFIND: The Infineon IPL60R085P7AUMA1 CoolMOS™ P7 is a top-tier 600V superjunction MOSFET that delivers an outstanding low figure-of-merit, significantly boosting efficiency and power density in high-performance SMPS and other power electronics applications. Its combination of low RDS(on), fast switching, and robust design makes it an ideal choice for engineers aiming to push the boundaries of their power design.

Keywords: CoolMOS™ P7, Superjunction MOSFET, High-Efficiency, Power Density, Figure-of-Merit (FOM)